cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 1/9 mtb20a04q8 cystek product specification dual n-channel enhancement mode power mosfet mtb20a04q8 features ? simple drive requirement ? low on-resistance ? fast switching speed ? dual n-ch mosfet package ? pb-free lead plating & halogen-free package equivalent circuit outline ordering information device package shipping MTB20A04Q8-0-T3-G sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel mtb20a04q8 sop-8 g gate s source d drain bv dss 40v i d @ v gs =10v, t c =25 c 13.4a i d @ v gs =10v, t a =25 c 8.4a r dson @v gs =10v, i d =8a 16m (typ) r dson @v gs =4.5v, i d =4a 18m (typ) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products d2 d2 d1 d1 g2 s2 g1 packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name pin 1 s1
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 2/9 mtb20a04q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 40 gate-source voltage v gs 20 v continuous drain current @ v gs =10v, t c =25 c 13.4 continuous drain current @ v gs =10v, t c =100c 9.5 continuous drain current @ v gs =10v, t a =25 c 8.4 (note 2) continuous drain current @ v gs =10v, t a =70 c i d 7.0 (note 2) pulsed drain current i dm 54 (note 1) a power dissipation for dual operation 3 2.4 (note 2) power dissipation for single operation p d 1.2 (note 3) w operating junction and storage temperature range tj, tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 25 62.5 (note 2) thermal resistance, junction-to-ambient, max r ja 125 (note 3) c/w note : 1. pulse width limited by maximum junction temperature 2. surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. 3. surface mounted on minimum copper pad, pulse width 10s. characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a g fs *1 - 7.6 - s v ds =10v, i d =5a i gss - - 100 na v gs = 20v, v ds =0v - - 1 v ds =32v, v gs =0v i dss - - 25 a v ds =32v, v gs =0v, tj=125 c - 16 20 v gs =10v, i d =8a r ds(on) *1 - 18 25 m v gs =4.5v, i d =4a dynamic qg *1, 2 - 19.5 - qgs *1, 2 - 2.7 - qgd *1, 2 - 3.9 - nc v ds =20v, i d =8a, v gs =10v t d(on) *1, 2 - 8.2 - tr *1, 2 - 17.4 - t d(off) *1, 2 - 36.6 - t f *1, 2 - 6 - ns v ds =20v, i d =8a, v gs =10v, r g =3
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 3/9 mtb20a04q8 cystek product specification ciss - 797 - coss - 69 - crss - 55 - pf v gs =0v, v ds =20v, f=1mhz source-drain diode i s *1 - - 8 i sm *3 - - 24 a v sd *1 - 0.75 1 v i s =1a, v gs =0v trr - 9.4 - ns qrr - 5.7 - nc i f =8a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 4/9 mtb20a04q8 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v,5v,4v v gs =3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =8a r ds( on) @tj=25c : 16m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8a
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 5/9 mtb20a04q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =8a v ds =20v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=175c v gs =10v, r ja =62.5c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 200 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =62.5c/w
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 6/9 mtb20a04q8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse maximum power dissipation 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =175c t a =25c r ja =62.5c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5c/w
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 7/9 mtb20a04q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 8/9 mtb20a04q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c978q8 issued date : 2016.12.23 revised date : page no. : 9/9 mtb20a04q8 cystek product specification sop-8 dimension millimeters inches millimeters inches marking: b20 device name a04 date code date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, a u g h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99 8-lead sop-8 plastic package cystek packa g e code: q8 dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
